Wafer-Scale Integration of High-Scandium AlScN Films
Analysis
Key Takeaways
- •Successfully deposited high-quality Al0.64Sc0.36N thin films on 200 mm wafers.
- •Achieved high deposition rate with low defects and controllable stress.
- •Demonstrated excellent uniformity in structural, compositional, and piezoelectric properties.
- •The findings are significant for next-generation MEMS applications.
“The paper reports "exceptionally high deposition rate of 8.7 μm/h with less than 1% AOGs and controllable stress tuning" and "exceptional wafer-average piezoelectric coefficients (d33,f =15.62 pm/V and e31,f = -2.9 C/m2)".”