Robust Transport in Topological Semimetals Achieved with Atomic Layer Deposition
Analysis
This research explores advancements in the fabrication of topological semimetals, crucial for future electronic devices. The study's focus on low-resistance transport and robustness against scaling suggests potential breakthroughs in miniaturization and performance.
Key Takeaways
- •Focuses on atomic layer deposition (ALD) for creating topological semimetals.
- •Highlights the achievement of low-resistance transport properties.
- •Emphasizes the scale-robust nature of the transport, suggesting stability with miniaturization.
Reference
“Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate”