Robust Transport in Topological Semimetals Achieved with Atomic Layer Deposition
Published:Dec 6, 2025 05:36
•1 min read
•ArXiv
Analysis
This research explores advancements in the fabrication of topological semimetals, crucial for future electronic devices. The study's focus on low-resistance transport and robustness against scaling suggests potential breakthroughs in miniaturization and performance.
Key Takeaways
- •Focuses on atomic layer deposition (ALD) for creating topological semimetals.
- •Highlights the achievement of low-resistance transport properties.
- •Emphasizes the scale-robust nature of the transport, suggesting stability with miniaturization.
Reference
“Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate”