Wafer-Scale Integration of High-Scandium AlScN Films
Published:Dec 30, 2025 20:25
•1 min read
•ArXiv
Analysis
This paper addresses a significant challenge in MEMS fabrication: the deposition of high-quality, high-scandium content AlScN thin films across large areas. The authors demonstrate a successful approach to overcome issues like abnormal grain growth and stress control, leading to uniform films with excellent piezoelectric properties. This is crucial for advancing MEMS technology.
Key Takeaways
- •Successfully deposited high-quality Al0.64Sc0.36N thin films on 200 mm wafers.
- •Achieved high deposition rate with low defects and controllable stress.
- •Demonstrated excellent uniformity in structural, compositional, and piezoelectric properties.
- •The findings are significant for next-generation MEMS applications.
Reference
“The paper reports "exceptionally high deposition rate of 8.7 μm/h with less than 1% AOGs and controllable stress tuning" and "exceptional wafer-average piezoelectric coefficients (d33,f =15.62 pm/V and e31,f = -2.9 C/m2)".”