Runaway Electron Risk in DTT Full Power Scenario
Analysis
Key Takeaways
- •Full power operation of DTT significantly increases the risk of runaway electron beam formation during disruptions.
- •The avalanche multiplication factor is a key parameter driving this risk.
- •Disruption mitigation strategies must balance thermal load reduction and runaway electron avoidance.
- •Careful impurity injection is crucial for managing runaway electron generation.
“The avalanche multiplication factor is sufficiently high ($G_ ext{av} \approx 1.3 \cdot 10^5$) to convert a mere 5.5 A seed current into macroscopic RE beams of $\approx 0.7$ MA when large amounts of impurities are present.”