Research Paper#Thermal Management, Nanoscale Heat Transfer, Finite Element Analysis, Molecular Dynamics🔬 ResearchAnalyzed: Jan 3, 2026 16:42
Non-Fourier Thermal Transport Modeling for Nanoscale Hot Spots
Published:Dec 30, 2025 22:53
•1 min read
•ArXiv
Analysis
This paper addresses a critical challenge in thermal management for advanced semiconductor devices. Conventional finite-element methods (FEM) based on Fourier's law fail to accurately model heat transport in nanoscale hot spots, leading to inaccurate temperature predictions and potentially flawed designs. The authors bridge the gap between computationally expensive molecular dynamics (MD) simulations, which capture non-Fourier effects, and the more practical FEM. They introduce a size-dependent thermal conductivity to improve FEM accuracy and decompose thermal resistance to understand the underlying physics. This work provides a valuable framework for incorporating non-Fourier physics into FEM simulations, enabling more accurate thermal analysis and design of next-generation transistors.
Key Takeaways
- •Conventional FEM using bulk thermal conductivity underestimates hot-spot temperatures in nanoscale devices.
- •MD simulations are used to benchmark FEM and understand non-Fourier effects.
- •A size-dependent thermal conductivity, $κ_{\mathrm{best}}$, is introduced to improve FEM accuracy.
- •Thermal resistance is decomposed to quantify different heat transport mechanisms.
- •The framework enables more accurate thermal analysis and design of next-generation transistors.
Reference
“The introduction of a size-dependent "best" conductivity, $κ_{\mathrm{best}}$, allows FEM to reproduce MD hot-spot temperatures with high fidelity.”