Non-Fourier Thermal Transport Modeling for Nanoscale Hot Spots
Analysis
Key Takeaways
- •Conventional FEM using bulk thermal conductivity underestimates hot-spot temperatures in nanoscale devices.
- •MD simulations are used to benchmark FEM and understand non-Fourier effects.
- •A size-dependent thermal conductivity, $κ_{\mathrm{best}}$, is introduced to improve FEM accuracy.
- •Thermal resistance is decomposed to quantify different heat transport mechanisms.
- •The framework enables more accurate thermal analysis and design of next-generation transistors.
“The introduction of a size-dependent "best" conductivity, $κ_{\mathrm{best}}$, allows FEM to reproduce MD hot-spot temperatures with high fidelity.”