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This paper presents a significant advancement in reconfigurable photonic topological insulators (PTIs). The key innovation is the use of antimony triselenide (Sb2Se3), a low-loss phase-change material (PCM), integrated into a silicon-based 2D PTI. This overcomes the absorption limitations of previous GST-based devices, enabling high Q-factors and paving the way for practical, low-loss, tunable topological photonic devices. The submicron-scale patterning of Sb2Se3 is also a notable achievement.
Reference

“Owing to the transparency of Sb2Se3 in both its amorphous and crystalline states, a high Q-factor on the order of 10^3 is preserved-representing nearly an order-of-magnitude improvement over previous GST-based devices.”