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Analysis

This paper presents a novel application of Electrostatic Force Microscopy (EFM) to characterize defects in aluminum oxide, a crucial material in quantum computing. The ability to identify and map these defects at the atomic scale is a significant advancement, as these defects contribute to charge noise and limit qubit coherence. The use of cryogenic EFM and the integration with Density Functional Theory (DFT) modeling provides a powerful approach for understanding and ultimately mitigating the impact of these defects, paving the way for improved qubit performance.
Reference

These results point towards EFM as a powerful tool for exploring defect structures in solid-state qubits.