Spin-Valley Coupling in BaMnBi2: Quantum Hall and Nonlinear Hall Effects
Published:Dec 30, 2025 18:27
•1 min read
•ArXiv
Analysis
This paper presents experimental evidence for a spin-valley locked electronic state in the bulk material BaMnBi2, a significant finding in the field of valleytronics. The observation of a stacked quantum Hall effect and a nonlinear Hall effect, along with the analysis of spin-valley degeneracy, provides strong support for the existence of this unique state. The contrast with the sister compound BaMnSb2 highlights the importance of crystal structure and spin-orbit coupling in determining these properties, opening a new avenue for exploring coupled spin-valley physics in bulk materials and its potential for valleytronic device applications.
Key Takeaways
- •Experimental evidence for spin-valley locked electronic states in bulk BaMnBi2.
- •Observation of stacked quantum Hall effect and nonlinear Hall effect.
- •Identification of a spin-valley degeneracy of four.
- •Contrast with BaMnSb2 highlights the role of crystal structure and spin-orbit coupling.
- •Potential for valleytronic device applications.
Reference
“The observation of a stacked quantum Hall effect (QHE) and a nonlinear Hall effect (NLHE) provides supporting evidence for the anticipated valley contrasted Berry curvature, a typical signature of a spin valley locked state.”