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Reversible Excitonic Charge State Conversion in WS2

Published:Dec 29, 2025 14:35
1 min read
ArXiv

Analysis

This paper presents a novel method for controlling excitonic charge states in monolayer WS2, a 2D semiconductor, using PVA doping and strain engineering. The key achievement is the reversible conversion between excitons and trions, crucial for applications like optical data storage and quantum light technologies. The study also highlights the enhancement of quasiparticle densities and trion emission through strain, offering a promising platform for future advancements in 2D material-based devices.
Reference

The method presented here enables nearly 100% reversible trion-to-exciton conversion without the need of electrostatic gating, while delivering thermally stable trions with a large binding energy of ~56 meV and a high free electron density of ~3$ imes$10$^{13}$ cm$^{-2}$ at room temperature.