Unveiling Partially Coherent Transport in IGZO: Implications for Semiconductor Performance

The study on the partially coherent nature of transport in IGZO is significant for the ongoing advancement of thin-film transistors. This research potentially contributes to improved designs and fabrication of next-generation display technologies and other semiconductor applications.

• •The paper explores the fundamental transport mechanisms within IGZO, a key material in thin-film transistors.
• •Understanding the coherence properties is crucial for optimizing the performance of IGZO-based devices.
• •The findings could lead to advancements in display technology and other electronic applications.