Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

This article reports on the creation of a high-quality beta-Ga2O3 pseudo-substrate on sapphire using sputtering. This is significant for epitaxial deposition, a process crucial in semiconductor manufacturing. The research likely focuses on improving the quality of the substrate to enhance the performance of subsequent epitaxial layers. The use of sputtering as the fabrication method is also a key aspect, as it offers a potentially scalable and controllable approach.