Samsung Repurposes 2D NAND Factory for Cutting-Edge HBM4 Production

infrastructure #hbm 📝 Blog|Analyzed: Feb 25, 2026 17:30•

Published: Feb 25, 2026 17:21

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1 min read

Analysis

Samsung is strategically transforming its existing infrastructure to meet the surging demand for high-bandwidth memory (HBM), essential for the growth of Generative AI. This proactive move highlights Samsung's dedication to leading-edge memory solutions and its ability to adapt to the evolving needs of the AI era.

Key Takeaways

•Samsung is shifting its focus from 2D NAND to more advanced 3D NAND and HBM4.
•The repurposed factory will produce 1c DRAM, a crucial component for HBM4.
•This upgrade is expected to help ease storage supply tensions and meet rising AI demands.

Reference / Citation

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"Samsung plans to completely stop the production of 2D NAND flash memory this year and comprehensively renovate the related old production lines to cater to the rapidly growing AI computing power and high-bandwidth memory (HBM) demand."

cnBetaFeb 25, 2026 17:21

* Cited for critical analysis under Article 32.

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