Linear Exciton Hall and Nernst Effects in 2D Semiconductors
Analysis
This paper investigates the linear exciton Hall and Nernst effects in monolayer 2D semiconductors. It uses semi-classical transport theory to derive the exciton Berry curvature and analyzes its impact on the Hall and Nernst currents. The study highlights the role of material symmetry in inducing these effects, even without Berry curvature, and provides insights into the behavior of excitons in specific materials like TMDs and black phosphorus. The findings are relevant for understanding and potentially manipulating exciton transport in 2D materials for optoelectronic applications.
Key Takeaways
- •Investigates linear exciton Hall and Nernst effects in 2D semiconductors.
- •Derives exciton Berry curvature and analyzes its impact.
- •Highlights the role of material symmetry in inducing these effects.
- •Provides insights into exciton behavior in TMDs and black phosphorus.
- •Relevant for optoelectronic applications.
“The specific symmetry of 2D materials can induce a significant linear exciton Hall (Nernst) effect even without Berry curvature.”