Edge Emission UV-C LEDs Grown by MBE on Bulk AlN
Research Paper#UV-C LED, AlGaN, MBE, Edge Emission🔬 Research|Analyzed: Jan 3, 2026 16:56•
Published: Dec 29, 2025 23:13
•1 min read
•ArXivAnalysis
This paper demonstrates the fabrication and performance of UV-C LEDs emitting at 265 nm, a critical wavelength for disinfection and sterilization. The use of Molecular Beam Epitaxy (MBE) on bulk AlN substrates allows for high-quality material growth, leading to high current density, on/off ratio, and low differential on-resistance. The edge-emitting design, similar to laser diodes, is a key innovation for efficient light extraction. The paper also identifies the n-contact resistance as a major area for improvement.
Key Takeaways
- •Demonstrates UV-C LEDs emitting at 265 nm, crucial for disinfection.
- •Employs MBE on bulk AlN for high-quality material growth.
- •Achieves high current density, on/off ratio, and low on-resistance.
- •Utilizes an edge-emitting design for efficient light extraction.
- •Identifies n-contact resistance as a key area for improvement.
Reference / Citation
View Original"High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$Ω\cdot$cm$^2$ at the highest current density is achieved."